Features
- Designed for processing wafers from 4” diameter down to wafer pieces
- 25 slot wafer carrier for 4’’/100mm wafers\
- 18’’ flat zone
- Load Station with vertical, down draft Laminar Flow Module and Class 100 HEPA Filter
- Automatic, Speed Controlled Non-Contact Cassette Loader
- FCS-10/30 Touch Screen Panel Computer Control System
- DCS 30 host computer control and data collection system
- Operating temperature: up to 1100 ºC
- Temperature accuracy: ±1 ºC
- Automatic recipe controller
Bank1 (atmospheric)
- Tube 1: Wet/Dry Oxidation
- Gases supplied: H2/N2, O2, Ar, N2
- Standard processes: Pyrogenic (hydrogen and oxygen) wet oxidation
- Oxygen dry oxidation
- Nitrogen anneal
- Forming gas anneal
- Tube 2: n-type doping
- Tube 3: p-type doping
Bank 2 (LPCVD)
- Tube 6 for Low Stress Silicon Nitride and Standard Stoichiometric Nitride Deposition recipes.
- Gases supplied: SiH2Cl2, NH3, N2
- Standard processes: Stoichiometric silicon nitride and Low-stress silicon nitride
