Features
- Samco 400iPB is for the deep reactive ion etching of Si and SiO2
- 4” electrostatic chuck with helium backside cooling
- Bosch process license for Si
- Silicon Processes: Smooth sidewall (scallop<200 nm), small trench (2-5um wide), and fast etch rate (>8-11 micron/min for wide trenches)
- SiO2 etch rate >120nm/min
- Easy touchscreen operation with process recipes that include substrate loading and unloading
- Gases: C4F8, SF6, O2, Ar, He
