Features
- Multi-chamber UHV system for fabrication of quantum devices
- Four chambers (from left to right): Load-lock (LL), Ion Milling, Evaporation, Oxidation
- LL Chamber: Loading/unloading, substrate heating to 200oC, chamber baking to 100oC, vacuum < 5×10-8 Torr
- Ion Milling Chamber: Kaufman type ion gun with argon and oxygen gas sources, precise substrate tilting and rotation, vacuum < 2×10-9 Torr
- Evaporation Chamber: Eight-pocket (15cc) electron beam source, 6kW/10kV high voltage power supply, precise substrate tilting and rotation for two-angle shadow deposition, source to substrate distance 50-55cm, substrate heating up to 750oC, LN2 substrate cooling, RGA (residual gas analyzer), vacuum < 7×10-10 Torr
- Oxidation Chamber: Heating of the substrate up to 200°C and baking of the chamber walls up to100°C, very high pressure static oxidation (up to 600 Torr), high pressure static oxidation (up to 100 Torr), dynamic oxidation at high pressure (~1 - 40 Torr), dynamic oxidation and low pressure static oxidation (0.05-0.5 Torr), ozone oxidation, RGA, vacuum < 2×10-9 Torr
- Automatic linear substrate transfer to and processing in all chambers through a single recipe
- Substrate size: Small chips to 4-inch diameter wafers
